The conversion efficiency of standard devices is mainly limited by recombination losses between the cell’s silicon and its metallization. CSEM aims to reduce such wastage. To this end, we’re developing competitive production processes and concepts to industrialize silicon heterojunction technology (Si-HJT). Si-HJT combines high efficiency and a limited number of production steps, which keeps costs down. We’re also developing new solutions for contact passivation in standard c-Si technologies—integrating a few additional process steps limits recombination losses and improves production lines.
The combination of these two approaches allows us to further develop innovative passivation and contacting concepts in order to define architectures and industrial processes for ultra-high-efficiency c-Si PV devices. We’re targeting a conversion efficiency of more than 26 percent.
Our expertise in low-temperature solar cell metallization techniques—including screen-printing, stencil printing, copper plating, and inkjet printing—our knowledge of coating technologies, interfaces, and passivation layers, and our know-how in simulating and characterizing layers, cells, and modules all help us to find new solutions for contacting and cell interconnections in all c-Si technologies. This leads to reduced costs, increased performance, and easier interconnection. These techniques can also be applied in fields such as printed electronics. We can also design and prototype application-specific c-Si PV devices with custom sizes and interconnection designs for high-energy density cells, such as those used in low-concentration or thermo-photovoltaics, low-illumination cells for consumer electronics, and other areas.